Effects of Structure Parameters and Stress for Capacitive Switches MEMS Bridge on Time Response

Author

He, Xun-jun ; Wu, Qun ; Song, Ming-Xin ; Yin, Jing-Hua

Author_Institution

Sch. of Electron. & Inf. Technol., Harbin Inst. of Technol., Harbin

fYear

2006

fDate

26-29 Oct. 2006

Firstpage

1

Lastpage

3

Abstract

In this paper, a novel method for analyzing the switching time of the electrostatic driven RF MEMS capacitive switches is presented. The effects of the structure parameters which mainly include the width, length and thickness and stress for capacitive switches MEMS bridge on time response are investigated using the SYNPLE module of IntelliSuitetrade tool. The result shows that the width of MEMS bridge and the stress in bridge indistinctively affect on time response, while the length and thickness of MEME bridge distinctively effect on time response.

Keywords

electrostatic devices; microswitches; microwave switches; stress effects; IntelliSuite tool; MEMS bridge; SYNPLE module; capacitive switch; electrostatic driven RF MEMS; stress; structure parameters; time response; Bridge circuits; Communication switching; Electrodes; Electrostatics; Micromechanical devices; Radiofrequency microelectromechanical systems; Solid modeling; Stress; Switches; Time factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas, Propagation & EM Theory, 2006. ISAPE '06. 7th International Symposium on

Conference_Location

Guilin

Print_ISBN

1-4244-0162-3

Electronic_ISBN

1-4244-0163-1

Type

conf

DOI

10.1109/ISAPE.2006.353319

Filename

4168360