• DocumentCode
    2453991
  • Title

    A 0 dBm IIP3, 23.5 dB Gain,1.9 dB NF, ESD Protected Wideband Programmable LNA for Multi-band Navigation Receiver Front-End

  • Author

    Hou, Xunping ; Zhao, Yuanfu ; Hu, Zhiyong ; Wen, Wu

  • Author_Institution
    Beijing Microelectron. Technol. Inst., Beijing, China
  • Volume
    2
  • fYear
    2010
  • fDate
    12-14 April 2010
  • Firstpage
    255
  • Lastpage
    258
  • Abstract
    This paper represents a digitally controlled, gain programmable SiGe BiCMOS low noise amplifier operating at 1-1.8 GHz used in multi-band navigation receiver front-end. An inductively degenerated common emitter LNA with an off-chip second order band-pass filter is adopted to achieve wideband input impedance matching without degrading much noise performance. The current splitting technique is used which doesn´t affect the input impedance matching and the gain flatness of the LNA when gain varies. The simulation results show a 23.5 dB maximum gain with noise figure of 1.9 dB and IIP3 of 0 dBm. The LNA can be tuned from 3.5 dB to 23.5 dB, only drawing 3.8 mA current from 3.3 V power supply.
  • Keywords
    BiCMOS integrated circuits; UHF integrated circuits; band-pass filters; electrostatic discharge; impedance matching; low noise amplifiers; receivers; wideband amplifiers; BiCMOS low noise amplifier; current 3.8 mA; current splitting; electrostatic discharge; frequency 1 GHz to 1.18 GHz; gain 3.5 dB to 23.5 dB; gain flatness; impedance matching; multiband navigation receiver frontend; noise figure 1.9 dB; off-chip second order band-pass filter; voltage 3.3 V; wideband programmable low noise amplifiers; BiCMOS integrated circuits; Digital control; Electrostatic discharge; Germanium silicon alloys; Impedance matching; Navigation; Noise measurement; Protection; Silicon germanium; Wideband; current splitting; impedance matching; low noise; noise figure; variable gain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Mobile Computing (CMC), 2010 International Conference on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4244-6327-5
  • Electronic_ISBN
    978-1-4244-6328-2
  • Type

    conf

  • DOI
    10.1109/CMC.2010.211
  • Filename
    5471341