Phonon dispersion in gallium nitride

Author

Demangeot, F. ; Frandon, J. ; Renucci, M.A. ; Beaumont, B. ; Gibart, P.

Author_Institution

Lab. de Phys. des Solides, Univ. Paul Sabatier, Toulouse, France

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

97

Lastpage

100

Abstract

GaN layers grown on sapphire (0001) substrates were studied at room temperature by Raman Spectroscopy. Directional dependance of frequency and polarization properties of the extraordinary modes, resulting from the anisotropic wurtzite, was evidenced by macro- and micro-Raman measurements. Second order Raman spectra were recorded and their completely symmetric component was analyzed in terms of phonon density of states. Due to the lack of phonon spectrum calculations, use was made of available q-dispersion curves of the closely related ZnO compound for phonon assignment

Keywords

III-V semiconductors; Raman spectra; gallium compounds; phonon dispersion relations; phonon spectra; semiconductor epitaxial layers; GaN; GaN layers; Raman spectroscopy; anisotropic wurtzite; directional dependance; extraordinary modes; frequency properties; phonon assignment; phonon density of states; polarization properties; q-dispersion curves; Anisotropic magnetoresistance; Frequency measurement; Gallium nitride; III-V semiconductor materials; Phonons; Polarization; Raman scattering; Spectroscopy; Temperature; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570889

Filename

570889