Dopant and thermal interaction on SPE formed SiC for NMOS performance enhancement

Author

Liu, P.W. ; Kuo, T.F. ; Li, C.I. ; Wang, Y.R. ; Huang, R.M. ; Tsai, C.H. ; Tsai, C.T. ; Ma, G.H.

Author_Institution

ATD Div., United Microelectron. Corp. (UMC), Tainan, Taiwan

fYear

2009

fDate

27-29 April 2009

Firstpage

24

Lastpage

25

Abstract

The dopant and thermal interaction on solid phase epitaxy (SPE) formed SiC has been investigated. We have studied the impact on substitutional carbon concentration ([C]_sub) from various thermal steps including low temperature anneal, SiGe epitaxy thermal budget, RTP, and laser anneal (LSA). Regarding the integration scheme for implementing embedded SiC (eSiC) S/D on NMOS performance enhancement, both post-LDD and post-S/D schemes were studied. The higher [C]_sub in post-LDD scheme was observed and the S/D dopants were found to enhance the carbon precipitation into interstitial with conventional RTP/LSA activation thermal processes. The phosphorous implant is also found to degrade [C]_sub in comparison to As implant. The higher [C]_sub and proximity to channel of formed eSiC in post-LDD scheme are beneficial to device performance. The fabricated eSiC S/D NMOS shows 31% mobility improvement and 7% current enhancement.

Keywords

Ge-Si alloys; MOS integrated circuits; laser beam annealing; silicon compounds; NMOS performance enhancement; SiC; SiGe; carbon precipitation; dopant; epitaxy thermal budget; laser anneal; low temperature anneal; phosphorous implant; solid phase epitaxy; thermal interaction; Annealing; Epitaxial growth; Germanium silicon alloys; Implants; MOS devices; Silicon carbide; Silicon germanium; Solids; Temperature; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-2784-0

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2009.5159275

Filename

5159275