DocumentCode
245616
Title
The stochastic modeling of TiO2 memristor and its usage in neuromorphic system design
Author
Miao Hu ; Yu Wang ; Qinru Qiu ; Yiran Chen ; Hai Li
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Pittsburgh, Pittsburgh, PA, USA
fYear
2014
fDate
20-23 Jan. 2014
Firstpage
831
Lastpage
836
Abstract
Memristor, the fourth basic circuit element, has shown great potential in neuromorphic circuit design for its unique synapse-like feature. However, though the continuous resistance state of memristor has been expected, obtaining and maintaining an arbitrary intermediate state cannot be well controlled in nowadays memristive system. In addition, the stochastic switching behaviors have been widely observed. To facilitate the investigation on memristor-based hardware implementation, we built a stochastic behavior model of TiO2 memristive devices based on the real experimental results. By leveraging the stochastic behavior of memristors, a macro cell design composed of multiple parallel connecting memristors can be successfully used in implementing the weight storage unit and the stochastic neuron - the two fundamental components in neural network (NN)s, providing a feasible solution in memristor-based hardware implementation.
Keywords
memristors; neural nets; stochastic processes; titanium compounds; TiO2; arbitrary intermediate state; continuous resistance state; macro cell design; neural network; neuromorphic system design; parallel connecting memristors; stochastic behavior model; stochastic neuron; stochastic switching behaviors; synapse-like feature; Artificial neural networks; Hardware; Memristors; Neurons; Resistance; Stochastic processes; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (ASP-DAC), 2014 19th Asia and South Pacific
Conference_Location
Singapore
Type
conf
DOI
10.1109/ASPDAC.2014.6742993
Filename
6742993
Link To Document