Development of 6.5 kV class IGBT with wide safety operation area

Author

Mochizuki, K. ; Suekawa, E. ; Iura, S. ; Satoh, K.

Author_Institution

Fukuryo Semicon Eng. Corp., Fukuoka, Japan

Volume

1

fYear

2002

fDate

2002

Firstpage

248

Abstract

A 6.5 kV IGBT with wide safe operation area (SOA) for the high voltage inverter application is presented. The correlation between turn off energy (E_off) and collector-emitter voltage (V_CE) in PT (punch through)-IGBT is not linear. As Eoff rapidly increases at any V_CE, Eoff becomes larger. A new IGBT makes that correlation linear by a new design concept: light punch through (LPT) concept. Blocking voltage more than rating voltage of 6.5 kV is easily satisfied at Tj=-40~125°C by the optimization of n-layer thickness (tn-) and resistivity (ρn-), and LPT concept. Moreover, this new IGBT chip has achieved wide SOA that RBSOA is Jc=140A/cm² at V_CE=4.3kV and Tj=125°C and short circuit SOA is t_w=13 μs at V_CE=4.3 kV and Tj=125°C by optimizing p-well layer

Keywords

insulated gate bipolar transistors; -40 to 125 C; 4.3 kV; 6.5 kV; IGBT; P-well layer optimisation; collector-emitter voltage; high voltage inverter; hot leakage current reduction; light punch through; n-layer thickness; optimization; p-base resistance; resistivity; turn off energy; wide safe operation area; Breakdown voltage; Buffer layers; Conductivity; Ice; Insulated gate bipolar transistors; Leakage current; Power engineering and energy; Safety; Semiconductor optical amplifiers; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Conversion Conference, 2002. PCC-Osaka 2002. Proceedings of the

Conference_Location

Osaka

Print_ISBN

0-7803-7156-9

Type

conf

DOI

10.1109/PCC.2002.998555

Filename

998555