Parallel connection of Integrated Gate Commutated Thyristors and diodes

Author

Hermann, Robert ; Bernet, Steffen ; Suh, Yongsug ; Steimer, Peter

Author_Institution

Power Electron. Group, Berlin Univ. of Technol., Berlin

fYear

2008

fDate

15-19 June 2008

Firstpage

1598

Lastpage

1605

Abstract

This paper describes the parallel connection of 4.5 kV integrated gate commutated thyristors (IGCTs) and diodes. The impact of varying device characteristics on the stationary current distribution of parallel connected semi-conductors is investigated. Possible solutions to improve the current sharing at steady state are presented. A thermal stabilization effect of parallel connected IGCTs is discussed. Furthermore, the behaviour of parallel connected devices during switching transients is investigated experimentally in a 1.5 kV, 5 kA buck converter. Especially the impact of asymmetrical circuit layouts, different turn-on and turn-off delays and junction temperatures are considered. It is shown, that a substantial current derating is necessary to enable a reliable operation of parallel IGCTs and diodes.

Keywords

commutation; current distribution; diodes; switching convertors; thyristor applications; IGCT; current sharing; integrated gate commutated thyristors; junction temperatures; parallel connection; parallel diodes; semiconductors; stationary current distribution; switching transients; thermal stabilization effect; turn-off delays; Buck converters; Circuit testing; Delay; Inductors; Medium voltage; Power electronics; Power semiconductor switches; Pulse width modulation converters; Semiconductor diodes; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2008. PESC 2008. IEEE

Conference_Location

Rhodes

ISSN

0275-9306

Print_ISBN

978-1-4244-1667-7

Electronic_ISBN

0275-9306

Type

conf

DOI

10.1109/PESC.2008.4592168

Filename

4592168