Introduction of the new high voltage, engineering (HVE) accelerator for high energy/high current ion implantation

Author

Koudijs, R. ; Gottdang, A. ; Mous, D.J.W.

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

498

Lastpage

500

Abstract

A new series of coaxial Tandetron™ tandem accelerators that meet today´s requirements on new applications including new trends in device manufacturing has been designed, manufactured and tested by HVE. This new design includes a new high current all-solid-state power supply constructed around the high-energy section, offering a smaller footprint in addition to higher reliability and reduced maintenance. With terminal voltage up to 5MV and electrical power for beam transport up to 25kW the new 1MV, 2MV, 3MV and 5MV HVE Coaxial Tandetron™ accelerators are able to accelerate milliampere beams of virtually all ion masses to energies ranging from 60keV to over 25MeV.

Keywords

ion accelerators; ion implantation; semiconductor doping; 1 MV; 2 MV; 25 kW; 3 MV; 5 MV; 60 keV to 25 MeV; coaxial Tandetron™ tandem accelerators; electrical power; high current all-solid-state power supply; high energy/high current ion implantation; high voltage engineering accelerator; terminal voltage; Coaxial components; Current supplies; Ion accelerators; Ion implantation; Life estimation; Manufacturing; Particle beams; Power engineering and energy; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1258050

Filename

1258050