• DocumentCode
    2463779
  • Title

    P-Channel HfO2 Nanocrystal Flash Memory

  • Author

    Lin, Yu-Hsien ; You, Hsin-Chiang ; Shih, Jyun-Hong ; Hong, Jin-Shi

  • Author_Institution
    Dept. of Electron. Eng., Nat. United Univ., Miaoli, Taiwan
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    829
  • Lastpage
    832
  • Abstract
    In this paper, we have explored the memory effect on the performance of the p-channel HfO2 nanocrystal trapping layer of SONOS-type flash memories. Band to Band hot electron injection and channel hot hole was employed for programming and erasing, respectively. The proposed p-channel SONOS-type HfO2 nanocrystal flash memory exhibits large memory windows, high program/erase speed, good endurance, and good disturbance characteristics.
  • Keywords
    flash memories; hafnium compounds; hot carriers; nanoelectronics; HfO2; SONOS-type flash memories; band to band hot electron injection; channel hot hole; disturbance characteristics; high program-erase speed; memory effect; memory windows; p-channel nanocrystal flash memory; p-channel nanocrystal trapping layer; Charge carrier processes; Flash memory; Hafnium compounds; Logic gates; Nanocrystals; Programming; Substrates; Flash memory; hafnium oxide; nanocrystal; p-channel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer, Consumer and Control (IS3C), 2012 International Symposium on
  • Conference_Location
    Taichung
  • Print_ISBN
    978-1-4673-0767-3
  • Type

    conf

  • DOI
    10.1109/IS3C.2012.213
  • Filename
    6228436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2463779