DocumentCode
2464614
Title
Be diffusion in InGaAs epitaxial layers during rapid thermal annealing: an effective diffusivity approach and a nonequilibrium model
Author
Marcon, J. ; Koumetz, S. ; Ketata, K. ; Ketata, M. ; Launay, P.
Author_Institution
LCIA/INSA de Rouen, Mont Saint Aignan, France
fYear
1996
fDate
29 Apr-3 May 1996
Firstpage
189
Lastpage
192
Abstract
Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, two models have been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed
Keywords
III-V semiconductors; beryllium; diffusion; doping profiles; gallium arsenide; indium compounds; rapid thermal annealing; semiconductor doping; semiconductor epitaxial layers; Be diffusion; InGaAs:Be; InGaAs:Be epitaxial layers; concentration profiles; effective diffusivity; nonequilibrium model; point defect concentration; rapid thermal annealing; Degradation; Differential equations; Doping; Epitaxial layers; Gallium compounds; Heterojunction bipolar transistors; Indium gallium arsenide; Rapid thermal annealing; Semiconductor process modeling; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location
Toulouse
Print_ISBN
0-7803-3179-6
Type
conf
DOI
10.1109/SIM.1996.570937
Filename
570937
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