• DocumentCode
    2465681
  • Title

    Power efficient charge pump circuit in standard twin-well CMOS technology

  • Author

    Lee, Jung-Chan ; Park, Jin-Young ; Chung, Yeonbae

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ.y, Daegu
  • fYear
    2008
  • fDate
    8-10 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we present a new charge pump circuit feasible for the implementation with standard twin-well CMOS process technology. The proposed charge pump employs PMOS-switching dual charge-transfer paths and a simple two-phase clock. Since charge transfer switches are fully turned on during each half of clock cycle, they transfer charges completely from the present stage to the next stage without suffering threshold voltage drop. During one clock cycle, the pump transfers charges twice through two pumping paths which are operating alternately. The performance comparison by simulations shows that the proposed charge pump exhibits the higher output voltage, the larger output current, and thus a better power efficiency over the traditional twin-well charge pumps.
  • Keywords
    charge pump circuits; clocks; PMOS-switching dual charge-transfer paths; power efficiency; power efficient charge pump circuit; twin-well CMOS process technology; two-phase clock; CMOS process; CMOS technology; Capacitors; Charge pumps; Charge transfer; Circuits; Clocks; Diodes; MOS devices; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-2539-6
  • Electronic_ISBN
    978-1-4244-2540-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2008.4760639
  • Filename
    4760639