DocumentCode
2465681
Title
Power efficient charge pump circuit in standard twin-well CMOS technology
Author
Lee, Jung-Chan ; Park, Jin-Young ; Chung, Yeonbae
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ.y, Daegu
fYear
2008
fDate
8-10 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
In this paper, we present a new charge pump circuit feasible for the implementation with standard twin-well CMOS process technology. The proposed charge pump employs PMOS-switching dual charge-transfer paths and a simple two-phase clock. Since charge transfer switches are fully turned on during each half of clock cycle, they transfer charges completely from the present stage to the next stage without suffering threshold voltage drop. During one clock cycle, the pump transfers charges twice through two pumping paths which are operating alternately. The performance comparison by simulations shows that the proposed charge pump exhibits the higher output voltage, the larger output current, and thus a better power efficiency over the traditional twin-well charge pumps.
Keywords
charge pump circuits; clocks; PMOS-switching dual charge-transfer paths; power efficiency; power efficient charge pump circuit; twin-well CMOS process technology; two-phase clock; CMOS process; CMOS technology; Capacitors; Charge pumps; Charge transfer; Circuits; Clocks; Diodes; MOS devices; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-2539-6
Electronic_ISBN
978-1-4244-2540-2
Type
conf
DOI
10.1109/EDSSC.2008.4760639
Filename
4760639
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