Electronic and optical properties of vanadium doped silicon carbide crystals grown by the sublimation sandwich method

Author

Müller, G. ; Hofmann, D. ; Mokhov, E.N. ; Ramm, M.G. ; Roenkov, A.D. ; Vodakov, A. ; Winnacker, A.

Author_Institution

Mater. Sci. Inst., Erlangen-Nurnberg Univ., Germany

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

219

Lastpage

222

Abstract

Cathodoluminescence-mapping experiments of n- and p-type 6H SiC intentionally doped with vanadium (V) show a local anti-correlation of the V⁴⁺ related IR-luminescence and the near bandedge donor-acceptor pair luminescence (N→Al). This fact indicates, that V acts as minority carrier lifetime determining impurity. The suppression of the V⁴⁺ luminescence near crystallographic defects is discussed under the possible mechanism of V precipitate formation. The binding-energy of the V^4+/5+ donor level is determined to E_v+1.57±0.05 eV by photoluminescence excitation measurements

Keywords

carrier lifetime; cathodoluminescence; impurity states; minority carriers; photoluminescence; precipitation; semiconductor materials; silicon compounds; vanadium; 6H SiC; IR-luminescence; SiC:V; V impurity; cathodoluminescence-mapping; crystallographic defects; crystals; donor level binding-energy; minority carrier lifetime; near bandedge donor-acceptor pair luminescence; photoluminescence excitation; precipitate formation; sublimation sandwich growth; Charge carrier lifetime; Conductivity; Crystallization; Crystals; Dielectric losses; Dielectric substrates; Impurities; Luminescence; Photoluminescence; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570943

Filename

570943