Properties of enhanced hydrostatic pressure-annealed silicon oxynitride films

Author

Wong, C.K. ; Kok, C.W. ; Misiuk, A. ; Panas, A.

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

The silicon oxynitride films were deposited by the plasma enhanced chemical vapor deposition (PECVD) technique at low temperature using ammonia, nitrous oxide and silane as precursor gases. The films were subjected to pre-annealing in oxygen at 1100-1200degC for 5 hr. The samples were then annealed/treated at 1100degC under enhanced hydrostatic pressure (HP) up to 1.17 GPa in argon. Effect of enhanced hydrostatic-pressure treatment on the Raman and photoluminescence (PL) of silicon oxynitride films was investigated. We found that the PL intensity of silicon rich oxynitride films can be significantly enhanced by HP annealing at high temperature (HT). The PL intensities are strongly governed by the preparation conditions of as-prepared layer as well as the annealing conditions.

Keywords

Raman spectra; annealing; photoluminescence; plasma CVD; silicon compounds; Raman spectra; SiON; enhanced hydrostatic-pressure treatment; photoluminescence; plasma enhanced chemical vapor deposition; pre-annealing; silicon oxynitride films; temperature 1100 degC to 1200 degC; time 5 hr; Annealing; Argon; Chemical vapor deposition; Gases; Photoluminescence; Plasma chemistry; Plasma properties; Plasma temperature; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760653

Filename

4760653