• DocumentCode
    2466142
  • Title

    Donor doping calibration in 4H-SiC using photoluminescence spectroscopy

  • Author

    Ivanov, I.G. ; Hallin, C. ; Henry, A. ; Kordina, O. ; Janzen, E.

  • Author_Institution
    Dept. of Phys. & Meas. Technol., Linkoping Univ., Sweden
  • fYear
    1996
  • fDate
    29 Apr-3 May 1996
  • Firstpage
    223
  • Lastpage
    226
  • Abstract
    The relative intensity of the intrinsic and impurity-related luminescence lines reflects the impurity concentration. A calibration procedure is presented for the nitrogen donor impurity in 4H-SiC. The calibration is valid for a large range of n-type doping from 1014 cm-3 to 3.1016 cm-3. Above this level the free-exciton related emission is not observable and below careful attention regarding the compensation of the material should be noted
  • Keywords
    excitons; impurity states; nitrogen; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor materials; silicon compounds; 4H-SiC; SiC:N; donor doping calibration; free-exciton related emission; impurity concentration; n-type doping; nitrogen donor impurity; photoluminescence; Calibration; Doping; Impurities; Iron; Luminescence; Photoluminescence; Silicon carbide; Spectroscopy; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
  • Conference_Location
    Toulouse
  • Print_ISBN
    0-7803-3179-6
  • Type

    conf

  • DOI
    10.1109/SIM.1996.570944
  • Filename
    570944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2466142