Compact monolithic coplanar 94 GHz front ends

Author

Haydl, W.H. ; Verweyen, L. ; Jakobus, T. ; Neumann, M. ; Tessmann, A. ; Krems, T. ; Schlechtweg, M. ; Reinert, W. ; Massier, H. ; Rudiger, J. ; Bronner, W. ; Hulsmann, A. ; Fink, T.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1281

Abstract

Fully integrated W-band 94 GHz heterodyne receivers in coplanar 0.15 /spl mu/m AlGaAs/InGaAs/GaAs PM-HEMT technology are described. The MMICs consist of a multistage low noise RF amplifier, a mixer, and an LO buffer amplifier. Balanced diode and single ended resistive HEMT mixers were investigated. A conversion gain of 13 dB and a DSB noise figure of 6.5 dB were obtained with a very compact 1/spl times/4 mm/sup 2/ front end MMIC, employing cascode amplifiers and balanced rat race diode mixer. The chip size is substantially less than that of any receiver chip published to date.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit noise; millimetre wave amplifiers; millimetre wave mixers; millimetre wave receivers; 0.15 micron; 13 dB; 6.5 dB; 94 GHz; AlGaAs-InGaAs-GaAs; DSB noise figure; III-V semiconductors; LO buffer amplifier; W-band; balanced diode mixers; balanced rat race diode mixer; cascode amplifiers; conversion gain; coplanar PM-HEMT technology; heterodyne receivers; mixer; multistage low noise RF amplifier; single ended resistive HEMT mixers; Bridge circuits; Circuit testing; Coplanar transmission lines; Diodes; Distributed parameter circuits; Gallium arsenide; HEMTs; Millimeter wave circuits; Millimeter wave technology; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596561

Filename

596561