DocumentCode
2466677
Title
Region of nearly constant off current versus gate length characteristics for sub-0.1 μm low power CMOS technology
Author
Lau, W.S. ; Yang, Peizhen ; Ng, Edwin T L ; Chian, Z.W. ; Ho, V. ; Siah, S.Y. ; Chan, L.
Author_Institution
Sch. of EEE, Nanyang Technol. Univ., Singapore
fYear
2008
fDate
8-10 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
A minimum in the off current versus gate length characteristics can occur at a threshold voltage maximum for MOS transistors. Sometimes, instead of a minimum, an inflection point can occur at a threshold voltage maximum. We observed that more than one minimum can be experimentally seen. These multiple off current minima can interact with each other and inflection points to create a large range of gate lengths with around the same off current.
Keywords
CMOS integrated circuits; MOSFET; MOS transistors; gate length characteristics; low power CMOS technology; off current characteristics; threshold voltage maximum; CMOS technology; Doping; Equations; Implants; Intrusion detection; Leakage current; MOSFETs; Sociotechnical systems; Subthreshold current; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-2539-6
Electronic_ISBN
978-1-4244-2540-2
Type
conf
DOI
10.1109/EDSSC.2008.4760689
Filename
4760689
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