• DocumentCode
    2466677
  • Title

    Region of nearly constant off current versus gate length characteristics for sub-0.1 μm low power CMOS technology

  • Author

    Lau, W.S. ; Yang, Peizhen ; Ng, Edwin T L ; Chian, Z.W. ; Ho, V. ; Siah, S.Y. ; Chan, L.

  • Author_Institution
    Sch. of EEE, Nanyang Technol. Univ., Singapore
  • fYear
    2008
  • fDate
    8-10 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A minimum in the off current versus gate length characteristics can occur at a threshold voltage maximum for MOS transistors. Sometimes, instead of a minimum, an inflection point can occur at a threshold voltage maximum. We observed that more than one minimum can be experimentally seen. These multiple off current minima can interact with each other and inflection points to create a large range of gate lengths with around the same off current.
  • Keywords
    CMOS integrated circuits; MOSFET; MOS transistors; gate length characteristics; low power CMOS technology; off current characteristics; threshold voltage maximum; CMOS technology; Doping; Equations; Implants; Intrusion detection; Leakage current; MOSFETs; Sociotechnical systems; Subthreshold current; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-2539-6
  • Electronic_ISBN
    978-1-4244-2540-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2008.4760689
  • Filename
    4760689