On the effect of scattering in Schottky Barrier MOSFETs

Author

Zeng, Lang ; Liu, Xiao Yan ; Du, Gang ; Kang, Jin Feng ; Han, Ru Qi

Author_Institution

Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Peking

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In this paper, we performed a simulation on a 45-nm UTB SOI Schottky Barrier MOSFETs using our two dimensional Ensemble full band Monte Carlo simulator to evaluate the effect of scattering in Schottky Barrier MOSFETs (SB FETs). The carrier transport details for both ballistic case and scattering case are simulated and analyzed. The scattering plays a less important role on the performance in SB FETs than in conventional highly doped S/D MOSFETs. Based on our analysis, the inappropriate of Natoripsilas ballistic transport model applied to SB FETs is revealed and the reason is due to the existence of non-local tunneling. Further development of the quasi ballistic model is necessary to include this non-local effect.

Keywords

MOSFET; Monte Carlo methods; Schottky barriers; ballistic transport; Natori ballistic transport model; UTB SOI Schottky barrier MOSFETs; carrier transport; nonlocal tunneling; scattering effect; size 45 nm; two-dimensional ensemble full band Monte Carlo simulator; Acoustic scattering; Ballistic transport; Electromagnetic compatibility; FETs; MOSFETs; Microelectronics; Monte Carlo methods; Optical scattering; Performance evaluation; Schottky barriers; Schottky barrier MOSFETs; ballistic transport; scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760703

Filename

4760703