AlGaInP thin-film LED with ITO omni-directional reflector

Author

Yan, Weiwei ; Guo, Weiling ; Cui, Bifeng ; Gao, Wei ; Yin, Fei ; Cui, Desheng

Author_Institution

Key Lab. of Opto-Electron. Technol., Beijing Univ. of Technol., Beijing, China

fYear

2011

fDate

24-26 June 2011

Firstpage

5685

Lastpage

5687

Abstract

Four kinds of thin-film light emitting diodes (LEDs), with different metal reflectors and different thickness indium tin oxide (ITO) layers, were fabricated from the same AlGaInP/GaAs epitaxial layer. For comparison, three kinds of LEDs have the same ITO/AuZnAu reflector, but have different thickness of ITO film 65, 90 and 270nm, respectively. The device with 65nm ITO film provides the best luminous intensity-current (L-I) and injection current-forward voltage (I-V) performance, which has the luminous intensity of 149.2 mcd (@20mA) and the forward voltage of 2.15v (@20mA). In addition, two kinds of LEDs have the same 90nm ITO layer, but have different reflector ITO/AuZnAu and ITO/Au, respectively. The LED with ITO/AuZnAu reflector has better optical and electrical properties. The possible reason may be the diffusion of Zn content into the ITO layer and GaP layer. The influences of Zn content and the thickness of ITO film to the optical and electrical properties of the LEDs are discussed in this paper.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gold alloys; indium compounds; light emitting diodes; optical elements; phosphorus compounds; semiconductor epitaxial layers; thin film devices; tin compounds; zinc alloys; AlGaInP-GaAs; ITO omnidirectional reflector; ITO-AuZnAu; electrical properties; epitaxial layer; indium tin oxide layers; injection current-forward voltage performance; light emitting diode; luminous intensity-current performance; metal reflectors; optical properties; size 65 nm to 270 nm; thin film LED; voltage 2.15 V; Films; Gallium arsenide; Gold; Indium tin oxide; Light emitting diodes; Zinc; AlGaInP; ITO; omni-directional reflector; thin-film light emitting diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Remote Sensing, Environment and Transportation Engineering (RSETE), 2011 International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-9172-8

Type

conf

DOI

10.1109/RSETE.2011.5965643

Filename

5965643