Effects of uniaxial strain on the gate capacitance of double gate MOSFETs

Author

Shams, Md Itrat Bin ; Alam, Md Kawsar ; Khosru, Quazi D M

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Gate capacitance versus voltage (C-V) characteristics for double gate MOSFETs with uniaxially strained silicon substrate are presented incorporating wave function penetration effect. Changes in capacitance with stress levels up to 5 GPa are studied. Physical insights of the capacitance value change are also discussed. Contributions of band splitting and effective mass change in C-V due to uniaxial strain are analyzed. Dependencies of C-V change on doping density and body thickness for uniaxial strain are revealed for double gate MOSFETs.

Keywords

MOSFET; capacitance; doping profiles; effective mass; insulated gate field effect transistors; wave functions; band splitting; doping density; double gate MOSFET; effective mass; gate capacitance; silicon substrate; uniaxial strain; wave function penetration effect; Capacitance; Capacitance-voltage characteristics; Doping; Effective mass; MOSFETs; Silicon; Stress; Uniaxial strain; Voltage; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760706

Filename

4760706