• DocumentCode
    2467721
  • Title

    Grand challenges in power semiconductors

  • Author

    Shenai, K.

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Univ. of Toledo, Toledo, OH
  • fYear
    2008
  • fDate
    8-10 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Semiconductor materials and devices used for high-power switching and amplification of electrical and optical signals are often subjected to extreme levels of electrical and thermal stresses. This paper presents new opportunities for developing rugged power semiconductor devices to meet the challenges of the 21st century energy conversion applications.
  • Keywords
    power semiconductor devices; thermal stresses; amplification; electrical signals; electrical stresses; high-power switching; optical signals; power semiconductor devices; semiconductor materials; thermal stresses; Crystalline materials; Energy conversion; Energy storage; Optical devices; Optical materials; Semiconductor devices; Semiconductor materials; Silicon carbide; Transportation; US Department of Energy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-2539-6
  • Electronic_ISBN
    978-1-4244-2540-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2008.4760741
  • Filename
    4760741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2467721