DocumentCode
2470442
Title
Study of Gd-doped CdTe film by XPS sputtering
Author
Xia, Zhongqiu ; Li, Rongping ; Dong, Haicheng ; Ren, Yuan ; Tian, Lei ; Feng, Song
Author_Institution
Key Lab. of Semicond. Photovoltaic Technol., Inner Mongolia Univ., Huhhot, China
fYear
2011
fDate
24-26 June 2011
Firstpage
6308
Lastpage
6311
Abstract
In this thesis,the Gd-doped CdTe films are prepareted by using the double source vacuum evaporation method,and sputtered by XPS every other 10 seconds,the whole XPS spectra of the Gd-doped CdTe film and the fine XPS spectra of every element characteristic peak are obtained.We analyzed the the films by XPS,we also did the research about the atomic concentration and combined state changes of each element in the growth of thin films.
Keywords
II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; gadolinium; semiconductor doping; semiconductor growth; semiconductor thin films; sputter deposition; vacuum deposition; CdTe:Gd; XPS sputtering; atomic concentration; double source vacuum evaporation method; element characteristic peak; thin film growth; time 10 s; Crystals; Educational institutions; Films; Solar power generation; Spectroscopy; Sputtering; Vacuum technology; CdTe film; Gd-doped; XPS sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Remote Sensing, Environment and Transportation Engineering (RSETE), 2011 International Conference on
Conference_Location
Nanjing
Print_ISBN
978-1-4244-9172-8
Type
conf
DOI
10.1109/RSETE.2011.5965799
Filename
5965799
Link To Document