4E-4 Propagation Characteristics of SH-SAW in (1120) ZnO Layer/Silica Glass Substrate Structures

Author

Tanaka, Atsushi ; Yanagitani, Takahiko ; Matsukawa, Mami ; Watanabe, Yoshiaki

Author_Institution

Doshisha Univ., Kyotanabe

fYear

2007

fDate

28-31 Oct. 2007

Firstpage

280

Lastpage

283

Abstract

A (1120) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K¹) in the ZnO (0deg, 90deg, psi) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0deg, 90deg, 55deg) film/silica glass substrate structure had a relatively large K² value of 3.4 % at H/lambda=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.

Keywords

II-VI semiconductors; glass; piezoelectric thin films; sputter deposition; surface acoustic wave devices; zinc compounds; IDT electrode; RF magnetron sputtering; SH-SAW device; SH-SAW excitation; ZnO; electromechanical coupling coefficients; silica glass substrate; surface acoustic wave propagation; textured ZnO film; Glass; Silicon compounds; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2007. IEEE

Conference_Location

New York, NY

ISSN

1051-0117

Print_ISBN

978-1-4244-1384-3

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2007.81

Filename

4409654