Control and stability of AlAs wet oxidation studied by in-situ optical monitoring in a low-pressure, low-temperature steam furnace

We focus on the mechanical stability of the oxides formed, especially with regard to postoxidation rapid thermal annealing (RTA). Since most device fabrication recipes require the ohmic contacts to be annealed after the oxides are formed, it is important that the oxide/semiconductor interfaces do not delaminate during this step. We oxidize a thin layer of AlGaAs bounded on either side by GaAs