DocumentCode
2471729
Title
Tunable narrow linewidth distributed Bragg reflector lasers
Author
Coleman, J.J.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
2
fYear
1998
fDate
3-4 Dec 1998
Firstpage
157
Abstract
We present details of the fabrication and characterization of laser structures, including measurements of the laser emission linewidth and DBR tuning range. Similar results on long wavelength InGaAsP-InP DBR lasers with first-order gratings will be described
Keywords
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser tuning; quantum well lasers; spectroscopic light sources; DBR tuning range; InGaAsP-InP; first-order gratings; laser emission linewidth; laser structure fabrication; long wavelength InGaAsP-InP DBR lasers; tunable narrow linewidth distributed Bragg reflector lasers; Distributed Bragg reflectors; Epitaxial growth; Etching; Gallium arsenide; Gratings; Optical device fabrication; Optical waveguides; Semiconductor lasers; Tunable circuits and devices; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.739509
Filename
739509
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