Highly accurate and precise measurement technique for effective exposure dose

Author

Izuha, K. ; Fujisawa, T. ; Asano, M. ; Inoue, S.

Author_Institution

Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

2000

fDate

11-13 July 2000

Firstpage

8

Lastpage

9

Abstract

The recent advantage of a measurement technique for effective exposure dose (EED), which is performed by monitoring the residual thickness of the photoresist, has enabled us to elucidate errors consuming the dose margins. The EED describes total thickness variation caused by non-uniformity of illumination, post exposure baking, and non-uniformity of development, and so on. In this paper, the principles for EED measurement are discussed. The accuracy and precision of this technique is shown. Furthermore, the dynamic range of this technology is considered.

Keywords

ULSI; dosimetry; integrated circuit measurement; measurement errors; photoresists; accuracy; dynamic range; effective exposure dose; errors; highly accurate measurement technique; illumination; nonuniformity; photoresist; post exposure baking; precise measurement technique; residual thickness; total thickness variation; Fluctuations; Image converters; Image segmentation; Laboratories; Measurement techniques; Microelectronics; Resists; Testing; Thickness measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2000 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-004-6

Type

conf

DOI

10.1109/IMNC.2000.872598

Filename

872598