DocumentCode
2472786
Title
Young´s modulus evaluation of Si thin film fabricated by compatible process with Si MEMSs
Author
Hirai, Y. ; Marushima, Y. ; Nishikawa, K. ; Tanaka, Y.
Author_Institution
Osaka Prefecture Univ., Japan
fYear
2000
fDate
11-13 July 2000
Firstpage
82
Lastpage
83
Abstract
In this paper, in-situ evaluation of a Young´s modulus for a polycrystalline Si (poly-Si) thin film on a PSG (Phosphorous doped silica glass) sacrifice layer is demonstrated based on the pull-in voltage of a cantilever, which is easily prepared during the MEMS´s fabrication process.
Keywords
Young´s modulus; elemental semiconductors; micromechanical devices; semiconductor thin films; silicon; MEMS fabrication process; PSG sacrificial layer; Si; Young modulus; cantilever; polycrystalline Si thin film; pull-in voltage; Atomic force microscopy; Crystallization; Fabrication; Insulation; Mechanical factors; Micromechanical devices; Scanning electron microscopy; Semiconductor thin films; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872633
Filename
872633
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