• DocumentCode
    2472838
  • Title

    Optical gain from the direct gap transition of Ge-on-Si at room temperature

  • Author

    Liu, Jifeng ; Sun, Xiaochen ; Kimerling, Lionel C. ; Michel, Jurgen

  • Author_Institution
    Microphotonics Center, Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2009
  • fDate
    9-11 Sept. 2009
  • Firstpage
    262
  • Lastpage
    264
  • Abstract
    We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.
  • Keywords
    elemental semiconductors; energy gap; germanium; optical materials; optical saturable absorption; semiconductor doping; semiconductor epitaxial layers; Ge; Si; band-engineered Ge-on-Si; direct band gap; direct gap transition; laser gain medium; monolithic optical amplifiers; n-type doping; optical bleaching; optical gain; room temperature transition; temperature 293 K to 298 K; tensile strained n+ epitaxial Ge-on-Si; Doping; Optical buffering; Optical films; Optical pumping; Optical waveguides; Photonic band gap; Probes; Stimulated emission; Temperature; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
  • Conference_Location
    San Francisco, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-4402-1
  • Electronic_ISBN
    1949-2081
  • Type

    conf

  • DOI
    10.1109/GROUP4.2009.5338364
  • Filename
    5338364
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2472838