3.4 V operation 1 W MMIC power amplifier with SrTiO/sub 3/ capacitors for digital cellular phones

Author

Yamaguchi, K. ; Nishimura, T.B. ; Iwata, N. ; Takemura, K. ; Kuzuhara, M. ; Miyasaka, Y.

Author_Institution

Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1403

Abstract

This paper describes 950 MHz power performance of a two-stage MMIC amplifier utilizing n-AlGaAs/InGaAs/n-AlGaAs FETs and SiTiO/sub 3/ capacitors. Under 3.4 V drain bias operation, the MMIC with 2.0/spl times/2.4 mm/sup 2/ area delivered a /spl pi//4-shifted QPSK output signal of 0.8 W (29.0 dBm), a power-added efficiency (PAE) of 30% and an associated gain of 26.4 dB with an adjacent channel leakage power at 50 kHz off-center frequency of -50.5 dBc. It also achieved a saturated output power of 1.1 W with PAE of 39%.

Keywords

JFET integrated circuits; MMIC power amplifiers; capacitors; cellular radio; digital radio; field effect MMIC; field effect analogue integrated circuits; land mobile radio; strontium compounds; telephone sets; /spl pi//4-shifted QPSK signal; 1 W; 26.4 dB; 3.4 V; 39 percent; 950 MHz; AlGaAs-InGaAs-AlGaAs; SrTiO/sub 3/; SrTiO/sub 3/ capacitor; adjacent channel leakage power; digital cellular phone; gain; n-AlGaAs/InGaAs/n-AlGaAs HJFET; output power; power-added efficiency; two-stage MMIC power amplifier; Capacitors; FETs; Frequency; Gain; Indium gallium arsenide; MMICs; Operational amplifiers; Power amplifiers; Power generation; Quadrature phase shift keying;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596591

Filename

596591