Characterization of a new 4.5 kV press pack SPT+ IGBT in Voltage Source Converters with clamp circuit

Author

Alvarez, Rodrigo ; Bernet, Steffen ; Lindenmueller, Lars ; Filsecker, Felipe

Author_Institution

Power Electron. Lab., Tech. Univ. of Dresden, Dresden, Germany

fYear

2010

fDate

14-17 March 2010

Firstpage

702

Lastpage

709

Abstract

Recently developed IGBT press pack devices have become a competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. A new 85 mm, 4.5 kV, 1.2 kA press pack SPT+ IGBT and the corresponding freewheeling diode are characterized for an operation in Voltage Source Converters. To reduce the IGBT turn-on losses compared to hard switching the clamp circuit configuration of IGCTs was adapted to the operation of press pack IGBTs. The switching behavior of IGBT and diode are characterized for varying dc-link voltages, load currents, junction temperatures and clamp inductances.

Keywords

clamps; insulated gate bipolar transistors; power convertors; power semiconductor diodes; IGBT press pack devices; IGBT turn-on losses; active turn-off capability; clamp circuit; clamp inductances; current 1.2 kA; dc-link voltages; freewheeling diode; junction temperatures; load currents; medium voltage power semiconductors; voltage 4.5 kV; voltage source converters; Clamps; Electronics industry; Insulated gate bipolar transistors; Medium voltage; Power electronics; Power semiconductor switches; Semiconductor diodes; Semiconductor optical amplifiers; Switching circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Technology (ICIT), 2010 IEEE International Conference on

Conference_Location

Vi a del Mar

Print_ISBN

978-1-4244-5695-6

Electronic_ISBN

978-1-4244-5696-3

Type

conf

DOI

10.1109/ICIT.2010.5472715

Filename

5472715