Donor incorporation properties in an n-type modulation-doped beam-expander-integrated laser fabricated by shadow-mask growth

Author

Taike, A. ; Sato, H. ; Komori, M. ; Aoki, M. ; Tsuchiya, T. ; Uomi, K.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

285

Abstract

We investigated the donor incorporation properties in the beam expander (BEX) region of an n-type modulation doped (MD) MQW grown by both shadow mask growth (SMG) and selective area growth (SAG) from the viewpoint of the optical loss. As a result, we confirm that the donor concentration in the BEX region can be reduced for SMG, which is promising for decreasing the optical loss in the BEX region with keeping the MD effect in the gain region

Keywords

integrated optics; laser beams; masks; optical fabrication; optical transmitters; quantum well lasers; semiconductor growth; 1.3 mum; beam expander region; donor concentration; donor incorporation properties; gain region; n-type modulation doped MQW; n-type modulation-doped beam-expander-integrated laser fabrication; optical loss; selective area growth; shadow mask growth; shadow-mask growth; Diode lasers; Electronic mail; Epitaxial layers; Laboratories; Optical coupling; Optical fiber networks; Optical losses; Optical modulation; Optical waveguides; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739600

Filename

739600