THz semiconductor-based front-end receiver technology for space applications

Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeterwave power amplifiers, more accurate device and circuit models for commercial 3D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the THz frequency regime. This short paper highlights recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.