Modification of spontaneous emission rates in shallow ridge 8.3 nm erbium doped silica slot waveguides

Author

Tummidi, Ravi S. ; Pafchek, Robert M. ; Kim, Kangbaek ; Koch, Thomas L.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

226

Lastpage

228

Abstract

We show that conventional expressions for spontaneous emission into waveguide modes correctly predict broadband (non-resonant) Purcell enhancement in slot waveguides. Time resolved photoluminescence measurements on Er-doped ultra-thin 8.3 nm slot channel waveguides corroborate this effect.

Keywords

erbium; integrated optics; optical waveguides; photoluminescence; silicon compounds; spontaneous emission; SiO₂:Er; broadband Purcell enhancement; erbium doped silica slot waveguides; nonresonant Purcell enhancement; shallow ridge waveguides; size 8.3 nm; spontaneous emission; time resolved photoluminescence measurements; ultrathin slot channel waveguides; waveguide modes; Bandwidth; Electromagnetic waveguides; Erbium; Optical resonators; Optical waveguides; Photoluminescence; Silicon compounds; Spontaneous emission; Stimulated emission; Waveguide transitions; Dielectric Waveguides; Integrated Optoelectronics; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on

Conference_Location

San Francisco, CA

ISSN

1949-2081

Print_ISBN

978-1-4244-4402-1

Electronic_ISBN

1949-2081

Type

conf

DOI

10.1109/GROUP4.2009.5338383

Filename

5338383