DocumentCode
2473198
Title
Silicon needle crystals fabricated by high-selective anisotropic dry etching and their characteristics of field emission current
Author
Kanechika, Masakazu ; Mitsushima, Yasuichi
Author_Institution
Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan
fYear
2000
fDate
11-13 July 2000
Firstpage
130
Lastpage
131
Abstract
We study silicon needle crystals fabricated by high-selective anisotropic dry etching. The etch mask is not the fine patterned photoresist but the oxygen precipitation, which is induced by nitride ion implantation and the following oxidization. The silicon needle crystals have less than 10 nm tip radius and high aspect ratio 7. We demonstrate the field emission diode by these silicon needle crystals.
Keywords
diodes; electron field emission; elemental semiconductors; silicon; sputter etching; vacuum microelectronics; Si; anisotropic dry etching; aspect ratio; fabrication; field emission diode; microemitter; silicon needle crystal; Anisotropic magnetoresistance; Anodes; Crystals; Diodes; Dry etching; Electrodes; Hafnium; Needles; Resists; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872656
Filename
872656
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