• DocumentCode
    2473226
  • Title

    Intrinsic stress in silicon nitride and silicon dioxide films prepared by various deposition techniques

  • Author

    Kanicki, J. ; Wagner, P. ; Karasinsk, J. ; Angilello, J.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1988
  • fDate
    5-8 June 1988
  • Firstpage
    153
  • Abstract
    Summary form only given. The mechanical stress caused by silicon nitride and silicon dioxide films on
  • Keywords
    CVD coatings; internal stresses; silicon compounds; 25 to 600 degC; RF power density; Si wafers; Si-Si/sub 3/N/sub 4/; Si-SiO/sub 2/; X-ray diffraction; chemical-vapor-deposition techniques; compressive stress; gas composition; intrinsic stress; mechanical stress; stress gage; substrate curvature; substrate temperature; tensile stress; thermal stress; Radio frequency; Semiconductor films; Silicon compounds; Stress measurement; Substrates; Temperature distribution; Tensile stress; Thermal stresses; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation, 1988., Conference Record of the 1988 IEEE International Symposium on
  • Conference_Location
    Cambridge, MA, USA
  • ISSN
    1089-084X
  • Type

    conf

  • DOI
    10.1109/ELINSL.1988.13891
  • Filename
    13891
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2473226