Fine pattern fabrication below 100 nm with 70 kV cell projection electron beam

A cell projection electron beam (EB) lithography technique has been investigated to achieve high throughput and its system has come onto the market. However cell projection method flow huge beam current, and then Coulomb interaction by electrical repulsion grow larger. The Coulomb effect causes a blur and results in degradation of resolution. This means large area electron beam exposure does not always increase throughput for fine patterns. This paper describes the effects of the acceleration voltage on resolution and throughput of fine patterns below 100 nm by experiments and simulations.