DocumentCode
2473601
Title
Proposal of atom lithography for silicon quantum dots
Author
Asakawa, Y. ; Kumagai, H. ; Midorikawa, Katsumi ; Obara, M.
Author_Institution
Fac. of Sci. & Technol., Keio Univ., Yokohama, Japan
fYear
2000
fDate
11-13 July 2000
Firstpage
168
Lastpage
169
Abstract
Recently so called "atom lithography", which makes the most use of atom deposition techniques with an optical mask, has been studied. This technique has been enable to fabricate nanometer-size structure. To apply this technique to silicon, it is necessary to develop the laser system that emits deep ultraviolet light resonant to it.
Keywords
elemental semiconductors; nanotechnology; photolithography; semiconductor quantum dots; silicon; Si; Si quantum dots; atom deposition techniques; atom lithography; nanometer-size structure; optical mask; Atom optics; Atomic beams; Atomic layer deposition; Lithography; Nanostructures; Proposals; Quantum dot lasers; Quantum dots; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872683
Filename
872683
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