• DocumentCode
    2473823
  • Title

    A novel high voltage start-up current source for SMPS

  • Author

    Hu, Hao ; Lin, Zhi ; Chen, Xingbi

  • Author_Institution
    State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2012
  • fDate
    3-7 June 2012
  • Firstpage
    197
  • Lastpage
    200
  • Abstract
    A novel high voltage start-up current source to provide start-up current for integrated circuits in a switched mode power supply (SMPS) is presented. The current source contains a VDMOS transistor to sustain high voltage. The gate of the VDMOS transistor is biased at a certain voltage by a floating p-island, to provide start-up current. A NMOS transistor is used to turn on and off the current source. Experimental results indicate the high voltage start-up current source is able to start and restart as designed. The current source draws no current from the line after turned off. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.
  • Keywords
    MOSFET; power supply circuits; NMOS transistor; SMPS; VDMOS transistor; energy saving; floating p-island; high voltage start-up current source; integrated circuits; start-up current; switched mode power supply; Logic gates; MOSFETs; Patents; Resistors; Switched-mode power supply; Threshold voltage; current source; power supply; start-up;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
  • Conference_Location
    Bruges
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4577-1594-5
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • DOI
    10.1109/ISPSD.2012.6229057
  • Filename
    6229057