DocumentCode
2473823
Title
A novel high voltage start-up current source for SMPS
Author
Hu, Hao ; Lin, Zhi ; Chen, Xingbi
Author_Institution
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2012
fDate
3-7 June 2012
Firstpage
197
Lastpage
200
Abstract
A novel high voltage start-up current source to provide start-up current for integrated circuits in a switched mode power supply (SMPS) is presented. The current source contains a VDMOS transistor to sustain high voltage. The gate of the VDMOS transistor is biased at a certain voltage by a floating p-island, to provide start-up current. A NMOS transistor is used to turn on and off the current source. Experimental results indicate the high voltage start-up current source is able to start and restart as designed. The current source draws no current from the line after turned off. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.
Keywords
MOSFET; power supply circuits; NMOS transistor; SMPS; VDMOS transistor; energy saving; floating p-island; high voltage start-up current source; integrated circuits; start-up current; switched mode power supply; Logic gates; MOSFETs; Patents; Resistors; Switched-mode power supply; Threshold voltage; current source; power supply; start-up;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location
Bruges
ISSN
1943-653X
Print_ISBN
978-1-4577-1594-5
Electronic_ISBN
1943-653X
Type
conf
DOI
10.1109/ISPSD.2012.6229057
Filename
6229057
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