Advanced 0.13um smart power technology from 7V to 70V

Author

Chang, Hoon ; Jang, Jae-June ; Kim, Min-Hwan ; Lee, Eung-Kyu ; Jang, Dong-Eun ; Park, Jun-Sung ; Jung, Jae-Hyeon ; Yoon, Chang-Joon ; Bae, Sung-Ryoul ; Park, Chan-Ho

Author_Institution

S.LSI Div., Samsung Electron., Yongin, South Korea

fYear

2012

fDate

3-7 June 2012

Firstpage

217

Lastpage

220

Abstract

This paper presents BCD process integrating 7V to 70V power devices on 0.13um CMOS platform for various power management applications. BJT, Zener diode and Schottky diode are available and non-volatile memory is embedded as well. LDMOS shows best-in-class specific Ron (R_SP) vs. BV_DSS characteristics (i.e., 70V NMOS has R_SP of 69mΩ-mm² with BV_DSS of 89V). Modular process scheme is used for flexibility to various requirements of applications.

Keywords

BIMOS integrated circuits; CMOS integrated circuits; Schottky diodes; Zener diodes; bipolar transistors; power integrated circuits; random-access storage; BCD process; BJT; CMOS platform; LDMOS; Schottky diode; Zener diode; nonvolatile memory; power management applications; size 0.13 mum; smart power technology; voltage 7 V to 70 V; CMOS integrated circuits; CMOS technology; Doping; MOS devices; Metals; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229062

Filename

6229062