DocumentCode
2474127
Title
Effects of SF/sub 6/ addition to O/sub 2/ plasma on polyimide etching in ECR plasma etcher
Author
Sang Hoon Kim ; Hosung Moon ; Jinho Ahn
Author_Institution
Dept. of Mater. Eng., Hanyang Univ., Seoul, South Korea
fYear
2000
fDate
11-13 July 2000
Firstpage
214
Lastpage
215
Abstract
The effect of SF/sub 6/ addition in O/sub 2/ plasma on the etching characteristics of polyimide-one of the promising low-k interlayer dielectrics-has been studied. Plasma etching of polyimide with an O/sub 2//SF/sub 6/ mixture gas is desirable due to the improved etch topography and lowered dielectric constant in spite of reduced etch rate and etching selectivity to SiO/sub 2/ hard mask.
Keywords
dielectric thin films; permittivity; polymer films; sputter etching; ECR plasma; O/sub 2/ plasma; SF/sub 6/ addition; SF/sub 6/-O/sub 2/; SiO/sub 2/ hard mask; dielectric constant; etch rate; etch topography; etching; etching selectivity; low-k interlayer dielectric; polyimide; Curing; Dielectric constant; Etching; Plasma applications; Plasma chemistry; Plasma devices; Plasma materials processing; Polyimides; Surface morphology; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872718
Filename
872718
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