DocumentCode
2474172
Title
Surface modified SiO/sub 2/ xerogel films from HMDS/acetone for intermetal dielectrics
Author
Hong-Ryul Kim ; Hyung-Ho Park
Author_Institution
Dept. of Ceramic Eng., Yonsei Univ., Seoul, South Korea
fYear
2000
fDate
11-13 July 2000
Firstpage
218
Lastpage
219
Abstract
In this study, a novel sol-gel synthesis procedure using HMDS as surface modifier and acetone as solvent without solvent exchange step for the preparation of SiO/sub 2/ xerogel thin film is proposed. The concentration of modifying agent as HMDS was also optimized for the high porous SiO/sub 2/ xerogel film. The microstructural and electrical properties of SiO/sub 2/ xerogel films for applications as intermetal dielectrics according to the new method were studied.
Keywords
aerogels; dielectric thin films; silicon compounds; sol-gel processing; HMDS surface modifier; SiO/sub 2/; SiO/sub 2/ porous xerogel thin film; acetone solvent; electrical properties; intermetal dielectric; microstructural properties; sol-gel synthesis; Aging; Bonding; Delay effects; Dielectric materials; Human computer interaction; Inorganic materials; Semiconductor films; Semiconductor materials; Solvents; Surface cracks;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872720
Filename
872720
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