Specific features of SiC-IGBT with 13kV switching

Author

Ueno, Masaya ; Miyake, Masataka ; Miura-Mattausch, Mitiko

Author_Institution

Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2012

fDate

3-7 June 2012

Firstpage

261

Lastpage

264

Abstract

Switching behavior of a 4H-SiC IGBT is discussed considering the punch-through effect of the base layer. The switching behavior is investigated with a mixed-mode simulation of a 2D-numerical device simulator, where extremely abrupt switching characteristics are observed at voltage ratings of 6.5kV and 13kV. The origin is explained by the carrier dynamics under the punch-through condition. As a proof of this explanation, the switching behaviors are reproduced by circuit simulation with the compact IGBT model HiSIM-IGBT, where the punch-through behavior is considered.

Keywords

III-V semiconductors; insulated gate bipolar transistors; numerical analysis; silicon compounds; wide band gap semiconductors; 2D-numerical device simulator; 4H-IGBT; HiSIM-IGBT; SiC; base layer; circuit simulation; compact IGBT model; mixed-mode simulation; punch-through effect; voltage 13 kV; voltage 6.5 kV; Circuit simulation; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Semiconductor device modeling; Switches; Switching circuits; HiSIM; IGBT; SiC; compact model; tail current;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229073

Filename

6229073