DocumentCode
2474190
Title
New passivation of GaAs Schottky contact using sulfidation and hydrogenation
Author
Kang, Min-Gu ; Kim, Ji-Wan ; Park, Hyung-Ho
Author_Institution
Dept. of Ceramic Eng., Yonsei Univ., Seoul, South Korea
fYear
2000
fDate
11-13 July 2000
Firstpage
220
Lastpage
221
Abstract
We report a novel method that can improve the Schottky property of Au/GaAs contact. The passivation technology was designed to control the defective states originated from two kinds of situations: i) air oxidation of GaAs surface before Schottky metallization, and ii) interfacial reaction during the metallization. In carefully controlled condition, the excellent Schottky contact was realized by sulfidation of GaAs surface and H-plasma treatment of Au/S-passivated GaAs interface.
Keywords
III-V semiconductors; Schottky barriers; gallium arsenide; gold; hydrogenation; metallisation; passivation; semiconductor-metal boundaries; Au-GaAs; Au/GaAs Schottky contact; air oxidation; defective states; hydrogenation; interfacial reaction; metallization; passivation; plasma treatment; sulfidation; Bonding; Cleaning; Gallium arsenide; Gold; Hydrogen; Passivation; Plasmas; Protection; Schottky barriers; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872722
Filename
872722
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