• DocumentCode
    2474370
  • Title

    200 kVA compact IGBT modules with double-sided cooling for HEV and EV

  • Author

    Chang, Hsueh-Rong ; Bu, Jiankang ; Hauenstein, Henning ; Wittmann, Michael ; Marcinkowski, Jack ; Pavier, Mark ; Palmer, Scott ; Tompkins, Jim

  • Author_Institution
    Automotive Product Bus. Unit, Int. Rectifier Corp., El Segundo, CA, USA
  • fYear
    2012
  • fDate
    3-7 June 2012
  • Firstpage
    299
  • Lastpage
    302
  • Abstract
    High power compact IGBT half bridge modules with a current rating of 300A and a blocking voltage of 650V using ultra thin IGBTs and diodes have been successfully developed with double-sided cooling capability. The wirebond-less package building block called COOLiR2DIE™ has a small area of 28.5 mm × 16 mm with a power rating 200 kVA, This is the most compact IGBT package reported today. A low on-state voltage of 1.6V at 300A is achieved in the wirebond-less package. The combination of lower on-state voltage and larger heat exchange area due to the solderable front metal (SFM), increases the IGBT module current carrying capability by 30%.
  • Keywords
    cooling; diodes; hybrid electric vehicles; insulated gate bipolar transistors; metals; COOLiR2DIE; HEV; SFM; apparent power 200 kVA; current 300 A; diodes; double-sided cooling; heat exchange; high power compact IGBT half bridge modules; hybrid electric vehicles; solderable front metal; voltage 1.6 V; voltage 650 V; wirebond-less package building block; Bridge circuits; Cooling; Hybrid electric vehicles; Insulated gate bipolar transistors; Metals; Oscillators; Power dissipation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
  • Conference_Location
    Bruges
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4577-1594-5
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • DOI
    10.1109/ISPSD.2012.6229082
  • Filename
    6229082