DocumentCode
2474370
Title
200 kVA compact IGBT modules with double-sided cooling for HEV and EV
Author
Chang, Hsueh-Rong ; Bu, Jiankang ; Hauenstein, Henning ; Wittmann, Michael ; Marcinkowski, Jack ; Pavier, Mark ; Palmer, Scott ; Tompkins, Jim
Author_Institution
Automotive Product Bus. Unit, Int. Rectifier Corp., El Segundo, CA, USA
fYear
2012
fDate
3-7 June 2012
Firstpage
299
Lastpage
302
Abstract
High power compact IGBT half bridge modules with a current rating of 300A and a blocking voltage of 650V using ultra thin IGBTs and diodes have been successfully developed with double-sided cooling capability. The wirebond-less package building block called COOLiR2DIE™ has a small area of 28.5 mm × 16 mm with a power rating 200 kVA, This is the most compact IGBT package reported today. A low on-state voltage of 1.6V at 300A is achieved in the wirebond-less package. The combination of lower on-state voltage and larger heat exchange area due to the solderable front metal (SFM), increases the IGBT module current carrying capability by 30%.
Keywords
cooling; diodes; hybrid electric vehicles; insulated gate bipolar transistors; metals; COOLiR2DIE; HEV; SFM; apparent power 200 kVA; current 300 A; diodes; double-sided cooling; heat exchange; high power compact IGBT half bridge modules; hybrid electric vehicles; solderable front metal; voltage 1.6 V; voltage 650 V; wirebond-less package building block; Bridge circuits; Cooling; Hybrid electric vehicles; Insulated gate bipolar transistors; Metals; Oscillators; Power dissipation;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location
Bruges
ISSN
1943-653X
Print_ISBN
978-1-4577-1594-5
Electronic_ISBN
1943-653X
Type
conf
DOI
10.1109/ISPSD.2012.6229082
Filename
6229082
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