DocumentCode
2474538
Title
Challenges and solutions for next generation main memory systems
Author
Kim, Joong-Ho ; Oh, Dan ; Kollipara, Ravi ; Wilson, John ; Best, Scott ; Giovannini, Thomas ; Shaeffer, Ian ; Ching, Michael ; Yuan, Chuck
Author_Institution
Rambus Inc., Los Altos, CA, USA
fYear
2009
fDate
19-21 Oct. 2009
Firstpage
93
Lastpage
96
Abstract
Today´s high performance computing memory systems mainly consist of with DDR3 DRAMs offering 800 Mb/s to 1600 Mb/s data rates. Extending the performance of these main memory systems beyond the current data rate is quite challengeable as the signal integrity issues with physical channel remains relatively constant compared to the device performance which improves as process advances. This paper presents three key technologies which help the current memory architecture to reach the data rates of 1600~3200 Mb/s without sacrificing memory capacity, increasing power consumption, or switching to more advanced differential signaling. These key features include FlexPhasetrade timing adjustment to eliminate trace length matching, dynamic point-to-point signaling to increase memory capacity at high data rates, and near ground signaling to reduce IO signaling power. This paper demonstrates the benefits of these features from signal and power integrity point of view.
Keywords
DRAM chips; integrated circuit design; DDR3 DRAM; next generation main memory systems; Analytical models; Crosstalk; Delay; High performance computing; Logic; Random access memory; Routing; Sampling methods; Signal processing; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging and Systems, 2009. EPEPS '09. IEEE 18th Conference on
Conference_Location
Portland, OR
Print_ISBN
978-1-4244-4447-2
Electronic_ISBN
978-1-4244-5646-8
Type
conf
DOI
10.1109/EPEPS.2009.5338468
Filename
5338468
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