• DocumentCode
    2474538
  • Title

    Challenges and solutions for next generation main memory systems

  • Author

    Kim, Joong-Ho ; Oh, Dan ; Kollipara, Ravi ; Wilson, John ; Best, Scott ; Giovannini, Thomas ; Shaeffer, Ian ; Ching, Michael ; Yuan, Chuck

  • Author_Institution
    Rambus Inc., Los Altos, CA, USA
  • fYear
    2009
  • fDate
    19-21 Oct. 2009
  • Firstpage
    93
  • Lastpage
    96
  • Abstract
    Today´s high performance computing memory systems mainly consist of with DDR3 DRAMs offering 800 Mb/s to 1600 Mb/s data rates. Extending the performance of these main memory systems beyond the current data rate is quite challengeable as the signal integrity issues with physical channel remains relatively constant compared to the device performance which improves as process advances. This paper presents three key technologies which help the current memory architecture to reach the data rates of 1600~3200 Mb/s without sacrificing memory capacity, increasing power consumption, or switching to more advanced differential signaling. These key features include FlexPhasetrade timing adjustment to eliminate trace length matching, dynamic point-to-point signaling to increase memory capacity at high data rates, and near ground signaling to reduce IO signaling power. This paper demonstrates the benefits of these features from signal and power integrity point of view.
  • Keywords
    DRAM chips; integrated circuit design; DDR3 DRAM; next generation main memory systems; Analytical models; Crosstalk; Delay; High performance computing; Logic; Random access memory; Routing; Sampling methods; Signal processing; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Performance of Electronic Packaging and Systems, 2009. EPEPS '09. IEEE 18th Conference on
  • Conference_Location
    Portland, OR
  • Print_ISBN
    978-1-4244-4447-2
  • Electronic_ISBN
    978-1-4244-5646-8
  • Type

    conf

  • DOI
    10.1109/EPEPS.2009.5338468
  • Filename
    5338468