3.3kV SiC MOSFETs designed for low on-resistance and fast switching

Author

Bolotnikov, Alexander ; Losee, Peter ; Matocha, Kevin ; Glaser, John ; Nasadoski, Jefrey ; Wang, Lei ; Elasser, Ahmed ; Arthur, Steven ; Stum, Zachary ; Sandvik, Peter ; Sui, Yang ; Johnson, Tammy ; Sabate, Juan ; Stevanovic, Ljubisa

Author_Institution

Semicond. Technol. Lab., Gen. Electr. Global Res., Niskayuna, NY, USA

fYear

2012

fDate

3-7 June 2012

Firstpage

389

Lastpage

392

Abstract

This paper discusses the latest developments in the optimization and fabrication of 3.3kV SiC vertical DMOSFETs. The devices show superior on-state and switching losses compared to the even the latest generation of 3.3kV fast Si IGBTs and promise to extend the upper switching frequency of high-voltage power conversion systems beyond several tens of kHz without the need to increase part count with 3-level converter stacks of faster 1.7kV IGBTs.

Keywords

MOSFET; insulated gate bipolar transistors; semiconductor device models; silicon compounds; Si IGBT; SiC; SiC MOSFET; high-voltage power conversion system; low on-resistance switching; upper switching frequency; vertical DMOSFET; voltage 1.7 kV; voltage 3.3 kV; MOSFETs; Semiconductor device measurement; Silicon carbide; Switches; Temperature; Temperature dependence; Temperature measurement; MOSFET; SiC; high voltage; power;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229103

Filename

6229103