Effects of absorption layer characteristic on spectral photoresponse of mid-wavelength InSb photodiodes

Author

Hu, W.D. ; Chen, X.S. ; Meng, C. ; Lv, Y.Q. ; Lu, W.

Author_Institution

Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China

fYear

2010

fDate

6-9 Sept. 2010

Firstpage

97

Lastpage

98

Abstract

We report on 2D numerical simulations of photoresponse characteristic for mid-wavelength InSb infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated for both front-side and back-side illuminated devices. Optimal thickness of absorption layers for different diffusion lengths are extracted theoretically. An empirical formula is proposed to predict a reasonable optimal thickness of absorption layer.

Keywords

indium compounds; numerical analysis; photodiodes; 2D numerical simulations; InSb; absorption layer characteristic effects; back-side illuminated devices; front-side illuminated devices; mid-wavelength photodiodes; spectral photoresponse; Absorption; Mathematical model; Numerical models; Numerical simulation; Performance evaluation; Photodetectors; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on

Conference_Location

Atlanta, GA

ISSN

2158-3234

Print_ISBN

978-1-4244-7016-7

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2010.5595647

Filename

5595647