• DocumentCode
    2475694
  • Title

    P0-12 Highly Oriented C-Axis 23° Tilted ZnO Films with High Quasi-Shear Mode Electromechanical Coupling Coefficients

  • Author

    Matsuo, Takuya ; Yanagitani, Takahiko ; Matsukawa, Mami ; Watanabe, Yoshiaki

  • Author_Institution
    Doshisha Univ., Kyotanabe
  • fYear
    2007
  • fDate
    28-31 Oct. 2007
  • Firstpage
    1229
  • Lastpage
    1232
  • Abstract
    A quasi-shear mode piezoelectric film with high electromechanical coupling coefficient k´15 is attractive for shear wave transducers, shear mode FBAR and SH-SAW devices. The single crystalline ideal ZnO film with c-axis-tilt angle of 28deg from the surface normal of the film has high k´15 value of 0.38. In this study, we have investigated c-axis-tilted ZnO films to obtain sufficient tilt angle and good crystalline alignment using RF magnetron sputtering technique. We focused on the angle between the substrate surface and target surface during the sputtering deposition. In case that the film was deposited on the substrate set at 90deg to the target surface, relatively large c-axis tilted angles of 22.6deg-26.2deg were obtained. Moreover, small psi - scan FWHM values from 6.7deg to 7.8deg of the film indicated good crystalline alignment. Finally, k´15 value of this film was estimated as 0.26, which was the highest value ever reported for c-axis-tilted ZnO or AlN films.
  • Keywords
    piezoelectric thin films; piezoelectric transducers; sputter deposition; ultrasonic transducers; zinc compounds; FBAR devices; RF magnetron sputtering; SH-SAW devices; ZnO; crystalline alignment; electromechanical coupling coefficients; piezoelectric film; quasi shear mode; shear wave transducers; tilt angle; tilted ZnO films; Crystallization; Fabrication; Film bulk acoustic resonators; Piezoelectric films; Piezoelectric transducers; Radio frequency; Sputtering; Substrates; Surface waves; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2007. IEEE
  • Conference_Location
    New York, NY
  • ISSN
    1051-0117
  • Print_ISBN
    978-1-4244-1383-6
  • Electronic_ISBN
    1051-0117
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2007.309
  • Filename
    4409882