DocumentCode
2475877
Title
Surface flashover performance of chemically etched polycrystalline alumina
Author
Mitra, A. ; Asokan, T. ; Sudarshan, T.S.
Author_Institution
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
fYear
1993
fDate
17-20 Oct 1993
Firstpage
318
Lastpage
323
Abstract
The surface flashover behavior of SiC and diamond-polished alumina samples is examined before and after chemical etching in molten borax. The etching parameters (e.g., crucible type, etching time, and temperature) are initially optimized to obtain a uniformly etched surface possessing minimum damages. The etching in molten borax at 850°C for 2 hours displayed a satisfactory surface condition, including minimum contamination. The surface flashover behavior of both the SiC- and the diamond-polished sampled to found to improve significantly after a controlled etching. The observed improvement in the surface flashover behavior is discussed in relation to the surface defects that are introduced during mechanical polishing
Keywords
alumina; electric breakdown; etching; flashover; polishing; surface discharges; surface structure; 2 hrs; 850 degC; Al2O3; SiC; chemical etching; chemically etched polycrystalline alumina; crucible type; diamond-polished; etching parameters; etching time; mechanical polishing; minimum contamination; molten borax; surface defects; surface flashover behavior; temperature; Abrasives; Chemicals; Dielectrics and electrical insulation; Electrodes; Etching; Flashover; Gas insulation; Silicon carbide; Surface contamination; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena, 1993. Annual Report., Conference on
Conference_Location
Pocono Manor, PA
Print_ISBN
0-7803-0966-9
Type
conf
DOI
10.1109/CEIDP.1993.378953
Filename
378953
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