Effects of polarization charge in GaN-based blue laser diodes (LD)

Author

Cheng, Li-Wen ; Sheng, Yang ; Xia, Chang-Sheng ; Lu, Wei ; Lestrade, Michel ; Li, Zi-Qiang ; Li, Zhan-Ming

Author_Institution

Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China

fYear

2010

fDate

6-9 Sept. 2010

Firstpage

13

Lastpage

14

Abstract

LASTIP software was applied to simulate a classical GaN-based blue laser diodes (LD) emitting at about 410 nm. Considering effects of polarization charge (PC) in this LD, theoretical simulation showed accordant results with that in experiments. On the other hand, without regard to PC, threshold voltage and current are lowered, while laser characteristic temperature is enhanced, which indicates that PC acts as a negative role for laser performance.

Keywords

III-V semiconductors; gallium compounds; laser beams; light polarisation; quantum well lasers; wide band gap semiconductors; GaN; LASTIP software; blue laser diodes; laser characteristics; laser performance; polarization charge; theoretical simulation; threshold current; threshold voltage; wavelength 410 nm; Gallium nitride; Power generation; Software; Temperature; Temperature sensors; Threshold current; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on

Conference_Location

Atlanta, GA

ISSN

2158-3234

Print_ISBN

978-1-4244-7016-7

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2010.5595689

Filename

5595689