P1H-5 Uniformity Optimization of the Electromechanical Coupling Coefficient in AlN Based Bulk Acoustic Wave Resonators

Author

Lanz, R. ; Senn, L. ; Gabathuler, L. ; Huiskamp, W. ; Strijbos, R.C. ; Vanhelmont, F.

Author_Institution

Oerlikon Balzers AG, Balzers

fYear

2007

fDate

28-31 Oct. 2007

Firstpage

1429

Lastpage

1432

Abstract

High yield bulk acoustic wave (BAW) device manufacturing is a challenge: properties of all films in a complex film stack need to be optimized. The commonly used piezoelectric AIN is one of the central films. Key parameters for this film are best possible uniformity of following physical parameters: acoustic thickness, electromechanical coupling coefficient and mechanical quality factor. This paper investigates possible causes for observed non-uniformity of the coupling coefficient. Such non-uniformities reduce the production yield in BAW volume manufacturing.

Keywords

Q-factor; acoustic resonators; aluminium compounds; bulk acoustic wave devices; electromechanical effects; electronics industry; manufacturing industries; mechanical properties; piezoelectric thin films; AlN; BAW volume manufacturing; acoustic thickness; bulk acoustic wave resonators; electromechanical coupling coefficient; high yield bulk acoustic wave device; mechanical quality factor; mobile telecommunication companies; nonuniformity coupling coefficient; optimized complex film stack; piezoelectric films; production yield; Acoustic waves; Film bulk acoustic resonators; Frequency; Hardware; Manufacturing; Piezoelectric films; Production; Q factor; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2007. IEEE

Conference_Location

New York, NY

ISSN

1051-0117

Print_ISBN

978-1-4244-1384-3

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2007.359

Filename

4409932